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ar c hive inf o rmati o n archive information mrf9085lr3 mrf9085lsr3 4-1 freescale semiconductor rf product device data rf power field effect transistors n - channel enhancement - mode lateral mosfets designed for broadband commercial and industrial applications with frequencies from 865 to 895 mhz. the high gain and broadband performance of these devices make them ideal for large - signal, common - source amplifier applications in 26 volt base station equipment. ? typical cdma performance @ 880 mhz, 26 volts, i dq = 700 ma is - 95 cdma pilot, sync, paging, traffic codes 8 through 13 output power ? 20 watts power gain ? 17.9 db efficiency ? 28% adjacent channel power ? 750 khz: - 45.0 dbc @ 30 khz bw 1.98 mhz: - 60.0 dbc @ 30 khz bw ? capable of handling 10:1 vswr, @ 26 vdc, 880 mhz, 90 watts cw output power features ? internally matched for ease of use ? high gain, high efficiency and high linearity ? integrated esd protection ? designed for maximum gain and insertion phase flatness ? excellent thermal stability ? characterized with series equivalent large - signal impedance parameters ? low gold plating thickness on leads, 40 ? nominal. ? rohs compliant ? in tape and reel. r3 suffix = 250 units per 56 mm, 13 inch reel. table 1. maximum ratings rating symbol value unit drain- source voltage v dss - 0.5, +65 vdc gate - source voltage v gs - 0.5, +15 vdc total device dissipation @ t c = 25 c derate above 25 c p d 250 1.43 w w/ c storage temperature range t stg - 65 to +150 c case operating temperature t c 150 c operating junction temperature t j 200 c table 2. thermal characteristics characteristic symbol value unit thermal resistance, junction to case r jc 0.7 c/w document number: mrf9085 rev. 11, 5/2006 freescale semiconductor technical data mrf9085lr3 mrf9085lsr3 880 mhz, 90 w, 26 v lateral n - channel rf power mosfets case 465 - 06, style 1 ni - 780 mrf9085lr3 case 465a - 06, style 1 ni - 780s mrf9085lsr3 ? freescale semiconductor, inc., 2006, 2008. all rights reserved.
ar c hive inf o rmati o n archive information 4-2 freescale semiconductor rf product device data mrf9085lr3 mrf9085lsr3 table 3. esd protection characteristics test conditions class human body model 1 (minimum) machine model mrf9085lr3 mrf9085lsr3 m2 (minimum) m1 (minimum) table 4. electrical characteristics (t c = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics zero gate voltage drain leakage current (v ds = 65 vdc, v gs = 0 vdc) i dss ? ? 10 adc zero gate voltage drain leakage current (v ds = 26 vdc, v gs = 0 vdc) i dss ? ? 1 adc gate - source leakage current (v gs = 5 vdc, v ds = 0 vdc) i gss ? ? 1 adc on characteristics gate threshold voltage (v ds = 10 vdc, i d = 300 adc) v gs(th) 2.0 ? 4.0 vdc gate quiescent voltage (v ds = 26 vdc, i d = 700 madc) v gs(q) ? 3.7 ? vdc drain- source on - voltage (v gs = 10 vdc, i d = 2 adc) v ds(on) ? 0.19 0.4 vdc forward transconductance (v ds = 10 vdc, i d = 6 adc) g fs ? 8.0 ? s dynamic characteristics (1) output capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c oss ? 73 ? pf reverse transfer capacitance (v ds = 26 vdc 30 mv(rms)ac @ 1 mhz, v gs = 0 vdc) c rss ? 2.9 ? pf 1. part is internally input matched. (continued)
ar c hive inf o rmati o n archive information mrf9085lr3 mrf9085lsr3 4-3 freescale semiconductor rf product device data table 4. electrical characteristics (t c = 25 c unless otherwise noted) (continued) characteristic symbol min typ max unit functional tests (in freescale test fixture, 50 ohm system) two - tone common - source amplifier power gain (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) g ps 17 17.9 ? db two - tone drain efficiency (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) 36 40 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) imd ? -31 -28 dbc input return loss (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 880.0 mhz, f2 = 880.1 mhz) irl ? -21 -9 db two - tone common - source amplifier power gain (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) g ps ? 17.9 ? db two - tone drain efficiency (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) ? 40.0 ? % 3rd order intermodulation distortion (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) imd ? -31 ? dbc input return loss (v dd = 26 vdc, p out = 90 w pep, i dq = 700 ma, f1 = 865.0 mhz, f2 = 865.1 mhz) irl ? -16 ? db power output, 1 db compression point, cw (v dd = 26 vdc, i dq = 700 ma, f1 = 880.0 mhz) p 1db ? 105 ? w common- source amplifier power gain (v dd = 26 vdc, p out = 90 w cw, i dq = 700 ma, f1 = 880.0 mhz) g ps ? 17.5 ? db drain efficiency (v dd = 26 vdc, p out = 90 w cw, i dq = 700 ma, f1 = 880.0 mhz) ? 51 ? % power output, 1 db compression point, cw (1) (v dd = 26 vdc, i dq = 700 ma, f1 = 960 mhz) p 1db ? 105 ? w 1. these values are derived from a 960 mhz optimized test fixture. values are not applicable to figures 1 and 2.
ar c hive inf o rmati o n archive information 4-4 freescale semiconductor rf product device data mrf9085lr3 mrf9085lsr3 figure 1. 865 - 895 mhz broadband test circuit schematic rf input rf outpu t z1 z2 v gg c1 c15 b1 + z3 z4 dut v dd c19 b3 c16 + l2 z11 z12 z16 b1, b2, b3 short ferrite beads, surface mount c1, c9, c15, c16 47 pf chip capacitors, atc c3 5.6 pf chip capacitor, atc c4, c13 0.8 - 8.0 variable capacitors, gigatrim c5, c6, c12 8.2 pf chip capacitors, atc c7, c17, c18, c19 10 f, 35 v tantalum surface mount capacitors, kemet c8 20 k pf chip capacitor, atc c10, c11 16 pf chip capacitors, atc c14 0.6 - 4.5 variable capacitor, gigatrim l1 7.15 nh inductor, coilcraft l2 17.5 nh inductor, coilcraft n1, n2 n - type panel mount, stripline, m/a - com wb1, wb2 5 mil becu shim (0.225 x 0.525) z1 0.219 x 0.080 microstrip z2 0.150 x 0.080 microstrip z3 0.851 x 0.080 microstrip z4 0.125 x 0.220 microstrip z5 0.123 x 0.220 microstrip z6 0.076 x 0.220 microstrip z7 0.261 x 0.220 microstrip z8 0.220 x 0.630 x 0.200 taper z9 0.240 x 0.630 microstrip z10 0.060 x 0.630 microstrip z11 0.067 x 0.630 microstrip z12 0.233 x 0.630 microstrip z13 0.630 x 0.220 x 0.200 taper z14 0.200 x 0.220 microstrip z15 0.055 x 0.220 microstrip z16 0.088 x 0.220 microstrip z17 0.226 x 0.220 microstrip z18 0.868 x 0.080 microstrip z19 0.129 x 0.080 microstrip z20 0.223 x 0.080 microstrip pcb arlon gx - 0300- 55 - 22, 30 mils r = 2.55 c11 z17 z20 z7 c8 c9 l1 c6 c5 c10 c17 c13 z10 c7 c18 b2 c3 c4 z5 z6 z9 z18 z19 c14 z13 z8 z14 c12 z15 + +++
ar c hive inf o rmati o n archive information mrf9085lr3 mrf9085lsr3 4-5 freescale semiconductor rf product device data figure 2. 865 - 895 mhz broadband test circuit component layout c1 c4 c3 c5 c7 c9 l1 b2 c8 b1 c12 c13 c14 c10 c6 c15 v gg v dd b3 c17 c19 c18 wb1 c16 l2 c11 wb2 cutout mrf9085 freescale has begun the transition of marking printed ci rcuit boards (pcbs) with the freescale semiconductor signature/logo. pcbs may have either motorola or freescale markings during the transition period. these changes will have no impact on form, fit or function of the current product.
ar c hive inf o rmati o n archive information 4-6 freescale semiconductor rf product device data mrf9085lr3 mrf9085lsr3 typical characteristics ?80 ?40 ?60 ?20 20 0 40 imd p out , output power (watts) pep f, frequency (mhz) g ps , power gain (db) 860 18 figure 3. class ab broadband circuit performance 14 11 p out , output power (watts) pep 19 7 figure 4. power gain, efficiency, imd versus output power 1 9 1 ?70 figure 5. intermodulation distortion products versus output power 100 10 ?10 ?30 ?60 ?50 ?40 11 13 15 13 12 v dd = 26 vdc p out = 90 w (pep) i dq = 700 ma two?tone, 100 khz tone spacing 865 17 15 17 10 100 16 870 875 880 885 890 895 900 p out , output power (watts) avg. p out , output power (watts) cw avg. g ps , power gain (db) 18 12 figure 6. power gain, efficiency versus output power 1 13 10 7 figure 7. power gain, efficiency, acpr versus output power 1 19 15 11 9 13 17 14 15 16 17 10 100 g ps , power gain (db) , drain efficiency (%) imd, intermodulation distortion (dbc) ?20 60 50 40 30 20 10 0 , drain efficiency (%) , drain efficiency (%) & acpr (db) ?36 ?34 ?32 ?30 ?28 35 40 45 50 1.00 1.25 1.50 1.75 2.00 , drain efficiency (%) imd, intermodulation distortion (dbc) vswr g ps vswr ?40 ?60 ?20 20 0 40 60 imd, intermodulation distortion (dbc) v dd = 26 vdc i dq = 700 ma f1 = 880.0 mhz f2 = 880.1 mhz g ps imd v dd = 26 vdc i dq = 700 ma f1 = 800.0 mhz f2 = 800.1 mhz 3rd order 5th order 7th order g ps v dd = 26 vdc i dq = 700 ma f = 880 mhz single tone g ps v dd = 26 vdc i dq = 700 ma f = 880 mhz 750 khz 1.98 mhz g ps , power gain (db) 19
ar c hive inf o rmati o n archive information mrf9085lr3 mrf9085lsr3 4-7 freescale semiconductor rf product device data figure 8. series equivalent source and load impedance f mhz z source z load 865 880 895 1.35 - j1.92 1.28 - j1.30 1.33 - j1.66 1.26 - j0.15 1.26 - j0.10 1.21 - j0.20 v dd = 26 v, i dq = 700 ma, p out = 90 w pep f = 865 mhz z o = 2 f = 865 mhz note: z load was chosen based on tradeoffs between gain, output power, drain efficiency and intermodulation distortion. z source z load z source = test circuit impedance as measured from gate to ground. z load = test circuit impedance as measured from drain to ground. z source z load input matching network device under test output matching network f = 895 mhz f = 895 mhz
ar c hive inf o rmati o n archive information 4-8 freescale semiconductor rf product device data mrf9085lr3 mrf9085lsr3 notes
ar c hive inf o rmati o n archive information mrf9085lr3 mrf9085lsr3 4-9 freescale semiconductor rf product device data notes
ar c hive inf o rmati o n archive information 4-10 freescale semiconductor rf product device data mrf9085lr3 mrf9085lsr3 notes
ar c hive inf o rmati o n archive information mrf9085lr3 mrf9085lsr3 4-11 freescale semiconductor rf product device data package dimensions mrf9085lr3 ni - 780 case 465 - 06 issue g notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 1.335 1.345 33.91 34.16 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 g 1.100 bsc 27.94 bsc h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 n 0.772 0.788 19.60 20.00 q .118 .138 3.00 3.51 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 3. source 1 3 2 d g k c e h s f s 0.365 0.375 9.27 9.52 m 0.774 0.786 19.66 19.96 aaa 0.005 ref 0.127 ref bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref q 2x m a m bbb b m t m a m bbb b m t b b (flange) seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m aaa b m t (insulator) r m a m ccc b m t (lid) mrf9085lsr3 ni - 780s case 465a - 06 issue h notes: 1. dimensioning and tolerancing per ansi y14.5m?1994. 2. controlling dimension: inch. 3. deleted 4. dimension h is measured 0.030 (0.762) away from package body. dim min max min max millimeters inches a 0.805 0.815 20.45 20.70 b 0.380 0.390 9.65 9.91 c 0.125 0.170 3.18 4.32 d 0.495 0.505 12.57 12.83 e 0.035 0.045 0.89 1.14 f 0.003 0.006 0.08 0.15 h 0.057 0.067 1.45 1.70 k 0.170 0.210 4.32 5.33 m 0.774 0.786 19.61 20.02 r 0.365 0.375 9.27 9.53 style 1: pin 1. drain 2. gate 5. source 1 2 d k c e h f 3 u (flange) 4x z (lid) 4x bbb 0.010 ref 0.254 ref ccc 0.015 ref 0.381 ref aaa 0.005 ref 0.127 ref s 0.365 0.375 9.27 9.52 n 0.772 0.788 19.61 20.02 u ??? 0.040 ??? 1.02 z ??? 0.030 ??? 0.76 m a m bbb b m t b b (flange) 2x seating plane m a m ccc b m t m a m bbb b m t a a (flange) t n (lid) m (insulator) m a m ccc b m t m a m aaa b m t r (lid) s (insulator)
ar c hive inf o rmati o n archive information 4-12 freescale semiconductor rf product device data mrf9085lr3 mrf9085lsr3 information in this document is provided solely to enable system and software implementers to use freescale semiconductor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale semiconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemnify and hold freescale semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2006, 2008. all rights reserved. how to reach us: home page: www.freescale.com e - mail: support@freescale.com usa/europe or locations not listed: freescale semiconductor technical information center, ch370 1300 n. alma school road chandler, arizona 85224 +1 - 800- 521- 6274 or +1 - 480- 768- 2130 support@freescale.com europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) support@freescale.com japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1 - 8 - 1, shimo - meguro, meguro - ku, tokyo 153 - 0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor hong kong ltd. technical information center 2 dai king street tai po industrial estate tai po, n.t., hong kong +800 2666 8080 support.asia@freescale.com for literature requests only: freescale semiconductor literature distribution center p.o. box 5405 denver, colorado 80217 1 - 800- 441- 2447 or 303 - 675- 2140 fax: 303 - 675- 2150 ldcforfreescalesemiconductor@hibbertgroup.com document number: mrf9085 rev. 11, 5/2006

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